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Categorii: IT&C Electronice
Produs: Memorie RAM Kingston, DIMM, DDR3, 16GB (2x8GB), CL10, 1866MHz
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Memorie RAM Kingston, DIMM, DDR3, 16GB (2x8GB), CL10, 1866MHz
Disponibilitate:
Nu este in stoc
Garantie:
999 luni
SKU: KF318C10BRK2/16
Producator: KINGSTON
Memorie RAM Kingston, DIMM, DDR3, 16GB (2x8GB), CL10, 1866MHz
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Specificatii produs
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Memorie RAM Kingston, DIMM, DDR3, 16GB, 1866MHz, CL10, 1.5V, Kit of 2
ECC
No
Capacitate memorie RAM
16GB
Frecventa
1866MHz
Tip memorie RAM
DDR3
Radiator RAM
Da
Latenta
10 CL
ECC
No
_Frecvența memorie RAM
1866MHz
_Radiator RAM
Da
_Tip memorie RAM
DDR3
_Latenta
10 CL
_Iluminare
Nu
_Recomandat Gaming
Da
Internal memory type
DDR3
Radiator
Da
Kit quad channel
Nu
Internal memory
16 GB
Buffered memory type
Unregistered (unbuffered)
Kit dual channel
Da
Backlight
No
Memory channels
Dual-channel
Tensiune alimentare
1.5 V
Recomandat pt gaming
Nu
Tip
DDR3
Latenta
9 - 12 CL
Memory clock speed
1600 MHz
Memory form factor
240-pin DIMM
Memory voltage
1.5 V
Module configuration
1024M x 64
CAS latency
10
Memory layout (modules x size)
2 x 8 GB
Frecventa
1866 MHz
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
37.5 ns
_Frecvența memorie RAM
1866MHz
ECC
No
_Radiator RAM
Da
Capacitate memorie RAM
16GB
_Tip memorie RAM
DDR3
_Latenta
10 CL
_Iluminare
Nu
_Recomandat Gaming
Da
Cooling type
Heatsink
Operating temperature (T-T)
0 - 85 °C
Windows operating systems supported
Yes
Linux operating systems supported
Yes
JEDEC standard
Yes
Internal memory type
DDR3
Height
34 mm
Harmonized System (HS) code
84733020
Kit
Da
Capacitate
16 GB
Radiator
Da
Kit quad channel
Nu
Iluminare led
Nu
Internal memory
16 GB
Component for
PC/Server
Buffered memory type
Unregistered (unbuffered)
Kit dual channel
Da
Backlight
No
Storage temperature (T-T)
-55 - 100 °C
Memory channels
Dual-channel
Country of origin
Taiwan
Tensiune alimentare
1.5 V
Recomandat pt gaming
Nu
Tip
DDR3
Latenta
9 - 12 CL
Memory clock speed
1600 MHz
Memory form factor
240-pin DIMM
Memory voltage
1.5 V
Width
133.3 mm
Module configuration
1024M x 64
CAS latency
10
Memory layout (modules x size)
2 x 8 GB
Depth
7.1 mm
Frecventa
1866 MHz
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
37.5 ns
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