Memorie RAM notebook Kingston, SODIMM, DDR3L, 4GB, CL11, 1600Mhz

Memorie RAM notebook Kingston, SODIMM, DDR3L, 4GB, 1600MHz, CL11, 1.35V

Capacitate memorie RAM
4GB
Frecventa
1600MHz
Tip memorie RAM
DDR3
Latenta
11 CL
_Capacitate memorie RAM
4GB
_Frecvența memorie RAM
1600MHz
ECC
No
_Tip memorie RAM
DDR3
__Latenta
11 CL
Buffered memory type
Unregistered (unbuffered)
Lead plating
Gold
Memory layout (modules x size)
1 x 4 GB
Memory clock speed
1600 MHz
Internal memory type
DDR3L
CAS latency
11
Memory BUS
64 bit
Chips organisation
x8
Bus clock rate
1600 MHz
Error indication
No
Module configuration
512M x 64
Memory layout
1 x 4096 MB
Internal memory
4096 MB
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
35 ns
Tensiune alimentare
1.35 V
Kit dual channel
Nu
Kit quad channel
Nu
Tip
DDR3 SODIMM
Latenta
9 - 12 CL
Frecventa
1600 MHz
Memory form factor
204-pin SO-DIMM
Memory voltage
1.35,1.5 V
_Capacitate memorie RAM
4GB
_Frecvența memorie RAM
1600MHz
DRAM-Kit
No
ECC
No
Kit
No
_Tip memorie RAM
DDR3
Component for
Laptop
Operating temperature (T-T)
0 - 85 °C
Harmonized System (HS) code
84733020
Height
30 mm
__Latenta
11 CL
Buffered memory type
Unregistered (unbuffered)
Lead plating
Gold
Storage temperature (T-T)
-55 - 100 °C
Country of origin
Taiwan
Memory layout (modules x size)
1 x 4 GB
Memory clock speed
1600 MHz
Internal memory type
DDR3L
CAS latency
11
Memory BUS
64 bit
Chips organisation
x8
Bus clock rate
1600 MHz
Error indication
No
Module configuration
512M x 64
Width
67.6 mm
Memory layout
1 x 4096 MB
Internal memory
4096 MB
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
35 ns
Tensiune alimentare
1.35 V
Kit dual channel
Nu
Kit quad channel
Nu
Capacitate
4 GB
Tip
DDR3 SODIMM
Latenta
9 - 12 CL
Frecventa
1600 MHz
Memory form factor
204-pin SO-DIMM
Memory voltage
1.35,1.5 V

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