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Categorii: IT&C Electronice
Produs: Memorie RAM notebook Kingston, SODIMM, DDR3L, 8GB, CL11, 1600Mhz
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Memorie RAM notebook Kingston, SODIMM, DDR3L, 8GB, CL11, 1600Mhz
Disponibilitate:
In stoc
Garantie:
999 luni
SKU: KVR16LS11/8
Producator: KINGSTON
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Memorie RAM notebook Kingston, SODIMM, DDR3L, 8GB, CL11, 1600Mhz
479.7 lei
243.1
lei
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Memorie RAM notebook Kingston, SODIMM, DDR3L, 8GB, 1600MHz, CL11, 1,35V
Capacitate memorie RAM
8GB
Frecventa
1600MHz
Tip memorie RAM
DDR3
Latenta
11 CL
_Capacitate memorie RAM
8GB
_Frecvența memorie RAM
1600MHz
ECC
No
_Tip memorie RAM
DDR3
__Latenta
11 CL
Buffered memory type
Unregistered (unbuffered)
Lead plating
Gold
Memory clock speed
1600 MHz
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR3L
CAS latency
11
Memory BUS
64 bit
Chips organisation
x8
Bus clock rate
1600 MHz
Error indication
No
Memory layout
1 x 8192 MB
Internal memory
8192 MB
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
35 ns
Tensiune alimentare
1.35 V
Kit dual channel
Nu
Kit quad channel
Nu
Tip
DDR3 SODIMM
Latenta
9 - 12 CL
Frecventa
1600 MHz
Memory form factor
204-pin SO-DIMM
Memory voltage
1.35,1.5 V
Module configuration
1G X 64
_Capacitate memorie RAM
8GB
_Frecvența memorie RAM
1600MHz
DRAM-Kit
No
ECC
No
Kit
No
_Tip memorie RAM
DDR3
Component for
Laptop
Operating temperature (T-T)
0 - 85 °C
Harmonized System (HS) code
84733020
Height
30 mm
__Latenta
11 CL
Buffered memory type
Unregistered (unbuffered)
Lead plating
Gold
Storage temperature (T-T)
-55 - 100 °C
Country of origin
Taiwan
Memory clock speed
1600 MHz
Memory layout (modules x size)
1 x 8 GB
Internal memory type
DDR3L
CAS latency
11
Memory BUS
64 bit
Chips organisation
x8
Bus clock rate
1600 MHz
Error indication
No
Memory layout
1 x 8192 MB
Internal memory
8192 MB
Width
67.6 mm
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
35 ns
Capacitate
8 GB
Tensiune alimentare
1.35 V
Kit dual channel
Nu
Kit quad channel
Nu
Tip
DDR3 SODIMM
Latenta
9 - 12 CL
Frecventa
1600 MHz
Memory form factor
204-pin SO-DIMM
Memory voltage
1.35,1.5 V
Module configuration
1G X 64
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